英语gydF4y2Ba

Ҳолл效应传感器当前分裂核心传感器ТасвирипешниҳодшудаgydF4y2Ba

Толори Таъсири传感器ҷорӣ分芯传感器gydF4y2Ba

P / N: mlrh - 2147gydF4y2Ba

ҲолопурседgydF4y2Ba МаҳсулотинавбатӣgydF4y2Ba

ТафсилотимаҳсулотgydF4y2Ba

ТегҳоимаҳсулотgydF4y2Ba

ТавсифиgydF4y2Ba

НомимаҳсулотgydF4y2Ba	Толори Таъсири传感器ҷорӣ分芯传感器gydF4y2Ba
P / NgydF4y2Ba	mlrh - 2147gydF4y2Ba
Ҷараёни номиналии ибтидоӣgydF4y2Ba	20/50/100/200A / 300 a / 400 agydF4y2Ba
ШиддатибаромадgydF4y2Ba	Қувваи ягона 2.5±2vgydF4y2Ba
ҚувваидугонаgydF4y2Ba	Қувваи дугона 0±4vgydF4y2Ba
Изолятсия ба шиддат тобоварgydF4y2Ba	3КВ/ 1дақgydF4y2Ba
ФосилаиамалиётgydF4y2Ba	50 - 60ГцgydF4y2Ba
ҲароратикорӣgydF4y2Ba	-40℃~ +85℃gydF4y2Ba
ИзолятсияgydF4y2Ba	Қатрони эпоксид капсул карда шудаастgydF4y2Ba
ПарвандаиберунӣgydF4y2Ba	ПБТ тобовар з оташgydF4y2Ba
一个gydF4y2BaаризаgydF4y2Ba	Таҷҳизотибарқиибасомадитағйирёбанда,инвертер,гардонандаисуръатитағирёбандаиAC / DCgydF4y2Ba Таъминотибарқиирежимиивазшаванда(smp),Таъминибарқибефосила(UPS),gydF4y2Ba

ВижагиҳоgydF4y2Ba

НасбиосонgydF4y2Ba

СохторитирезаgydF4y2Ba

Истеъмоли қувваи кам， хатти хеле хубgydF4y2Ba

Танҳо як тарҳ барои доираи васеи рейтингҳои ҷорӣgydF4y2Ba

Иммунитети баланд ба дахолати берунаgydF4y2Ba

Бе талафоти воридкунӣgydF4y2Ba

Дучанд Ҳокимият Толори传感器ҷорӣgydF4y2Ba

Маълумоти барқӣ (Ta=25℃±5℃)gydF4y2Ba

ВурудибаҳогузорӣgydF4y2Ba	我gydF4y2Ba_PNgydF4y2Ba	20/50/100gydF4y2Ba	一个gydF4y2Ba
ДиапазониченкунӣgydF4y2Ba	我gydF4y2Ba_PgydF4y2Ba	±30 /±75±150gydF4y2Ba	一个gydF4y2Ba
ШиддатибаромадgydF4y2Ba	VgydF4y2Ba_ogydF4y2Ba	±4 0 *(我gydF4y2Ba_PgydF4y2Ba/我gydF4y2Ba_PNgydF4y2Ba）gydF4y2Ba	VgydF4y2Ba
МуқовиматисарборӣgydF4y2Ba	RgydF4y2Ba_lgydF4y2Ba	> 10gydF4y2Ba	КОМgydF4y2Ba
ШиддатитаъминотgydF4y2Ba	VgydF4y2Ba_CgydF4y2Ba	（±12～±15） ±5%gydF4y2Ba	VgydF4y2Ba
ДақиқӣgydF4y2Ba	XgydF4y2Ba_GgydF4y2Ba	@IPN, T = 25°C <±1,0gydF4y2Ba	％gydF4y2Ba
ШиддатиофсетgydF4y2Ba	VgydF4y2Ba_OEgydF4y2Ba	@ip =0, t =25°c <±25gydF4y2Ba	mVgydF4y2Ba
Тағйирёбии ҳарорати ВgydF4y2Ba_OEgydF4y2Ba	VgydF4y2Ba_不gydF4y2Ba	@ip =0，-40 ~ +85°c <±1,0/gydF4y2Ba <±0 5 / <±0 5gydF4y2Ba	мВ/℃gydF4y2Ba
Тағйирёбии ҳарорати ВgydF4y2Ba_OgydF4y2Ba	VgydF4y2Ba_{操作系统gydF4y2Ba}	@ip = ipn，-40 ~ +85°c <±2,5gydF4y2Ba	％gydF4y2Ba
Шиддати ҷуброни гистерезисgydF4y2Ba	VgydF4y2Ba_哦gydF4y2Ba	@ip =0， пас 1* ipn <±25gydF4y2Ba	mVgydF4y2Ba
ХатогиихаттӣgydF4y2Ba	рgydF4y2Ba	< 1.0gydF4y2Ba	% FSgydF4y2Ba
/дидтgydF4y2Ba		＞ 100gydF4y2Ba	一个/μsgydF4y2Ba
ВақтиҷавобgydF4y2Ba	траgydF4y2Ba	@90% ipn <5.0gydF4y2Ba	мксgydF4y2Ba
Истеъмоли қувваи барқgydF4y2Ba	集成电路gydF4y2Ba	@ + 15 v < 23gydF4y2Ba	妈gydF4y2Ba
Истеъмоли қувваи барқgydF4y2Ba	集成电路gydF4y2Ba	@-15V < 4、5gydF4y2Ba	妈gydF4y2Ba
МаҷроимаҷроиgydF4y2Ba	BWgydF4y2Ba	@-3dB, IPN dc = 20gydF4y2Ba	ХЗgydF4y2Ba
ШиддатиизолятсияgydF4y2Ba	VgydF4y2Ba_dgydF4y2Ba	@50/60Гц， 1дақ， ac,1,5мА， 4,0gydF4y2Ba	KVgydF4y2Ba

НавъиҳалқаМаълумотибарқӣ:(Ta = 25°C Vc = + 12.0 vdc, RL = 2 kΩ)gydF4y2Ba

ПараметрgydF4y2Ba		MLRH-50A v / 2gydF4y2Ba	mlrh 2 - 100 a / vgydF4y2Ba	mlrh 2 - 200 a / vgydF4y2Ba	mlrh 2 - 300 a / vgydF4y2Ba	mlrh 2 - 400 a / vgydF4y2Ba	ВоҳидиgydF4y2Ba
ВурудибаҳогузорӣgydF4y2Ba	我gydF4y2Ba_PNgydF4y2Ba	50gydF4y2Ba	One hundred.gydF4y2Ba	200gydF4y2Ba	300gydF4y2Ba	400gydF4y2Ba	一个gydF4y2Ba
ДиапазониченкунӣgydF4y2Ba	我gydF4y2Ba_PgydF4y2Ba	0～±50gydF4y2Ba	0～±100gydF4y2Ba	0～±200gydF4y2Ba	0～±300gydF4y2Ba	0～±400gydF4y2Ba	一个gydF4y2Ba
ШиддатибаромадgydF4y2Ba	签证官gydF4y2Ba			2500±2 0 *(我gydF4y2Ba_PgydF4y2Ba/我gydF4y2Ba_PNgydF4y2Ba）gydF4y2Ba			VgydF4y2Ba
ШиддатибаромадgydF4y2Ba	签证官gydF4y2Ba	@ip = 0, t = 25°cgydF4y2Ba		2.500gydF4y2Ba			VgydF4y2Ba
МуқовиматисарборӣgydF4y2Ba	RgydF4y2Ba_lgydF4y2Ba			＞2gydF4y2Ba			КОМgydF4y2Ba
ШиддатитаъминотgydF4y2Ba	VgydF4y2Ba_CgydF4y2Ba			+ 12 0±5%gydF4y2Ba			VgydF4y2Ba
ДақиқӣgydF4y2Ba	XgydF4y2Ba_GgydF4y2Ba	@IgydF4y2Ba_PNgydF4y2BaT = 25°СgydF4y2Ba		<±1,0gydF4y2Ba			％gydF4y2Ba
ШиддатиофсетgydF4y2Ba	VgydF4y2Ba_OEgydF4y2Ba	@IgydF4y2Ba_PgydF4y2Ba= 0,Т= 25°СgydF4y2Ba		<±25gydF4y2Ba			mVgydF4y2Ba
Тағйирёбии ҳарорати ВgydF4y2Ba_OEgydF4y2Ba	VgydF4y2Ba_不gydF4y2Ba	@IgydF4y2Ba_PgydF4y2Ba=0，-40 ~ +85°СgydF4y2Ba		<±1,0gydF4y2Ba			мВ/℃gydF4y2Ba
Шиддати ҷуброни гистерезисgydF4y2Ba	VgydF4y2Ba_哦gydF4y2Ba	@ip = 0， пас 1 * ipngydF4y2Ba		<±20gydF4y2Ba			mVgydF4y2Ba
ХатогиихаттӣgydF4y2Ba	рgydF4y2Ba			< 1.0gydF4y2Ba			% FSgydF4y2Ba
/дидтgydF4y2Ba				＞ 100gydF4y2Ba			A /µ年代gydF4y2Ba
ВақтиҷавобgydF4y2Ba	траgydF4y2Ba	@90%互gydF4y2Ba		< 3.0gydF4y2Ba			µ年代gydF4y2Ba
Истеъмоли қувваи барқgydF4y2Ba	我gydF4y2Ba_CgydF4y2Ba			15gydF4y2Ba			妈gydF4y2Ba
МаҷроимаҷроиgydF4y2Ba	BWgydF4y2Ba	@-3dB,互gydF4y2Ba		dc = 20gydF4y2Ba			ХЗgydF4y2Ba
ШиддатиизолятсияgydF4y2Ba	VdgydF4y2Ba	@50/60Гц， 1дақ， acgydF4y2Ba		2.5gydF4y2Ba			KVgydF4y2Ba

Маълумотиумумӣ:gydF4y2Ba

【中文译文】ПараметрgydF4y2Ba	中文:РамзиgydF4y2Ba	* * * АрзишgydF4y2Ba	http://http://ВоҳидиgydF4y2Ba
ҲароратикорӣgydF4y2Ba	TgydF4y2Ba_{一个gydF4y2Ba}	-40 ~ +85gydF4y2Ba	°CgydF4y2Ba
ҲароратинигоҳдорӣgydF4y2Ba	TsgydF4y2Ba	-55 ~ + 125gydF4y2Ba	°CgydF4y2Ba
ВазнgydF4y2Ba	米gydF4y2Ba	70gydF4y2Ba	ggydF4y2Ba
МаводипластикӣgydF4y2Ba	PBT g30 / g15, ul94 - v0;gydF4y2Ba
СтандартҳоgydF4y2Ba	IEC60950-1: 2001gydF4y2Ba
	EN50178: 1998gydF4y2Ba
	sj20790 - 2000gydF4y2Ba

(Андозаҳомм):gydF4y2Ba

Эзоҳ:gydF4y2Ba

1,Вақтекиҷараёнченкардамешавад,азпинҳоиибтидоиисенсормегузарад,шиддатдарохирибаромадченкардамешавад。(Эзоҳ:Ноқилҳоибардурӯғметавонадбоисивайроншуданисенсоргардад)。gydF4y2Ba

2,Тарҳрезиифармоишӣдарҷараёнигуногуниноминалиивурудвашиддатибаромадмавҷудаст。gydF4y2Ba

3,Иҷроидинамикӣбеҳтаринаст,вақтекисӯрохиибтидоӣпуррапуркардамешавад;gydF4y2Ba

4、Барандаи бояд <100°c бошад;gydF4y2Ba

Маълумотиэлектрикиинавъиросткунҷа:(Ta = 25°C Vc = + 12.0 vdc, RL = 2 kΩ)gydF4y2Ba

ПараметрgydF4y2Ba		MLRHgydF4y2Ba-200年А/ 2ВgydF4y2Ba	MLRHgydF4y2Ba4 - 600А/ 2ВgydF4y2Ba	MLRHgydF4y2Ba4 - 800А/ 2ВgydF4y2Ba	MLRHgydF4y2Ba4 - 1000А/ 2ВgydF4y2Ba	MLRHgydF4y2Ba4 - 1200А/ 2ВgydF4y2Ba	MLRHgydF4y2Ba4 - 2000А/ 2ВgydF4y2Ba	ВоҳидиgydF4y2Ba
ВурудибаҳогузорӣgydF4y2Ba	互gydF4y2Ba	200gydF4y2Ba	600gydF4y2Ba	800gydF4y2Ba	1000gydF4y2Ba	1200gydF4y2Ba	2000gydF4y2Ba	一个gydF4y2Ba
ДиапазониченкунӣgydF4y2Ba	知识产权gydF4y2Ba	0～±200gydF4y2Ba	0～±600gydF4y2Ba	0～±800gydF4y2Ba	0～±1000gydF4y2Ba	0～±1200gydF4y2Ba	0～±2000gydF4y2Ba	一个gydF4y2Ba
ШиддатибаромадgydF4y2Ba	签证官gydF4y2Ba			2.500±2.0 * (IP / IPN)gydF4y2Ba				VgydF4y2Ba
ШиддатибаромадgydF4y2Ba	签证官gydF4y2Ba	@ip = 0, t = 25°cgydF4y2Ba		2.500gydF4y2Ba				VgydF4y2Ba
МуқовиматисарборӣgydF4y2Ba	RLgydF4y2Ba			＞2gydF4y2Ba				КОМgydF4y2Ba
ШиддатитаъминотgydF4y2Ba	风投gydF4y2Ba			+ 12 0±5%gydF4y2Ba				VgydF4y2Ba
ДақиқӣgydF4y2Ba	XGgydF4y2Ba	@IPN, T = 25°CgydF4y2Ba		<±1,0gydF4y2Ba				％gydF4y2Ba
ШиддатиофсетgydF4y2Ba	小海湾gydF4y2Ba	@ip = 0, t = 25°cgydF4y2Ba		<±25gydF4y2Ba				mVgydF4y2Ba
Тағйирёбии ҳарорати voegydF4y2Ba	ОвозgydF4y2Ba	@ip =0，-40 ~ +85°cgydF4y2Ba		<±1,0gydF4y2Ba				мВ/℃gydF4y2Ba
Шиддати ҷуброни гистерезисgydF4y2Ba	VOHgydF4y2Ba	@ip = 0， пас 1 * ipngydF4y2Ba		<±20gydF4y2Ba				mVgydF4y2Ba
ХатогиихаттӣgydF4y2Ba	рgydF4y2Ba			< 1.0gydF4y2Ba				% FSgydF4y2Ba
/дидтgydF4y2Ba				＞ 100gydF4y2Ba				A /µ年代gydF4y2Ba
ВақтиҷавобgydF4y2Ba	траgydF4y2Ba	@90%互gydF4y2Ba		< 7.0gydF4y2Ba				µ年代gydF4y2Ba
Истеъмоли қувваи барқgydF4y2Ba	集成电路gydF4y2Ba			15gydF4y2Ba				妈gydF4y2Ba
МаҷроимаҷроиgydF4y2Ba	BWgydF4y2Ba	@-3dB,互gydF4y2Ba		dc = 20gydF4y2Ba				ХЗgydF4y2Ba
ШиддатиизолятсияgydF4y2Ba	VdgydF4y2Ba	@50/60Гц， 1дақ， acgydF4y2Ba		6.0gydF4y2Ba				KVgydF4y2Ba

Маълумотиумумӣ:gydF4y2Ba

【中文译文】ПараметрgydF4y2Ba	中文:РамзиgydF4y2Ba	* * * АрзишgydF4y2Ba	http://http://ВоҳидиgydF4y2Ba
ҲароратикорӣgydF4y2Ba	助教gydF4y2Ba	-40 ~ +85gydF4y2Ba	°CgydF4y2Ba
ҲароратинигоҳдорӣgydF4y2Ba	TsgydF4y2Ba	-55 ~ + 125gydF4y2Ba	°CgydF4y2Ba
ВазнgydF4y2Ba	米gydF4y2Ba	200gydF4y2Ba	ggydF4y2Ba
МаводипластикӣgydF4y2Ba	PBT g30 / g15, ul94 - v0;gydF4y2Ba
СтандартҳоgydF4y2Ba	IEC60950-1: 2001gydF4y2Ba
	EN50178: 1998gydF4y2Ba
	sj20790 - 2000gydF4y2Ba